A study of reactive sputter etching by directed ion beams and R.F. plasmas.
PhD thesis
Revell, P. 1982. A study of reactive sputter etching by directed ion beams and R.F. plasmas. PhD thesis Middlesex Polytechnic Faculty of Engineereing, Science and Mathematics.
Type | PhD thesis |
---|---|
Title | A study of reactive sputter etching by directed ion beams and R.F. plasmas. |
Authors | Revell, P. |
Abstract | This work compares the alternative methods of etching silicon semiconductor materials. Conventional methods of pattern delineation using aqueous etchants are being replaced for some applications by dry processing. The reasons for the move towards plasma and ion beam etching are examined particularly in relation to very large scale integration (VLSI) technology and the required reduction in feature size. A review of the published information on the use of reactive gas plasmas shows that this etching process is capable of producing vertical profiles without loss of pattern definition in lum. features. |
Department name | Faculty of Engineereing, Science and Mathematics. |
Institution name | Middlesex Polytechnic |
Publication dates | |
29 Sep 2010 | |
Publication process dates | |
Deposited | 29 Sep 2010 |
Completed | 1982 |
Output status | Published |
Additional information | A thesis submitted in partial fulfilment of the requirements for the degree of Doctor of Philosophy of the Council for National Academic Awards. |
Language | English |
File |
https://repository.mdx.ac.uk/item/82zx3
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