Titanium contacts on N-type silicon
PhD thesis
Wilkinson, J. 1974. Titanium contacts on N-type silicon. PhD thesis Middlesex Polytechnic Microelectronics Centre
Type | PhD thesis |
---|---|
Title | Titanium contacts on N-type silicon |
Authors | Wilkinson, J. |
Abstract | The current transport mechanism usually assumed to be valid for metal silicon Schottky barriers is thermionic-emission. However, Crowell and Beguwala, using a thermionic-diffusion model, suggested that significant deviations from the behaviour predicted by the thermionic-emission theory shonld be observed on low barriers, especially those formed on silicon of low impurity concentration. The barrier height of titanium on n-type silicon is 0.1)0 volt which is lower than most other metals, and should make the effects predicted |
Department name | Microelectronics Centre |
Institution name | Middlesex Polytechnic |
Publication dates | |
13 Jan 2015 | |
Publication process dates | |
Deposited | 13 Jan 2015 |
Completed | Dec 1974 |
Output status | Published |
Language | English |
File |
https://repository.mdx.ac.uk/item/84w02
Download files
55
total views48
total downloads0
views this month0
downloads this month