Ultra-high density scanning electrical probe phase-change memory for archival storage.
Conference paper
Wang, L., Shah, P., Wright, C., Aziz, M., Sebastian, A., Pozidis, H. and Pauza, A. 2010. Ultra-high density scanning electrical probe phase-change memory for archival storage. International Symposium on Optical Memory. Taiwan Oct 2010
Type | Conference paper |
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Title | Ultra-high density scanning electrical probe phase-change memory for archival storage. |
Authors | Wang, L., Shah, P., Wright, C., Aziz, M., Sebastian, A., Pozidis, H. and Pauza, A. |
Abstract | In our work, we investigate the recording and readout performance of such phase-change memories and demonstrate experimental and simulation results which are based on a particular medium stack (Si/TiN/DLC/GST/DLC). The recording is achieved by injecting electrical current from a conductive tip to the storage medium to cause phase transformation through Joule heating, while readout is realised by sensing the current variation due to the significant differences in the electrical resistivity between the amorphous and crystalline phases. The experimental results clearly show that a crystalline bit with approximately 30nm diameter can be produced and readback, in good agreement with the corresponding simulations of the write/read processes. |
Research Group | SensoLab group |
Conference | International Symposium on Optical Memory |
Publication process dates | |
Deposited | 10 May 2011 |
Completed | Dec 2010 |
Output status | Published |
Publisher's version | |
Language | English |
https://repository.mdx.ac.uk/item/83592
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