The design of rewritable ultrahigh density scanning-probe phase-change memories
Article
Wright, C., Wang, L., Shah, P., Aziz, M., Varesi, E., Bez, R., Moroni, M. and Cazzaniga, F. 2011. The design of rewritable ultrahigh density scanning-probe phase-change memories. IEEE Transactions on Nanotechnology. 10 (4), pp. 900-912. https://doi.org/10.1109/TNANO.2010.2089638
Type | Article |
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Title | The design of rewritable ultrahigh density scanning-probe phase-change memories |
Authors | Wright, C., Wang, L., Shah, P., Aziz, M., Varesi, E., Bez, R., Moroni, M. and Cazzaniga, F. |
Abstract | A systematic design of practicable media suitable for rewritable, ultrahigh density (>;1Tbit/sq.in.), high data rate (>;1Mbit/s/tip) scanning-probe phase-change memories is presented. The basic design requirements were met by a Si/TiN/Ge2Sb2Te5 (GST)/diamond-like carbon structure, with properly tailored electrical and thermal conductivities. Various alternatives for providing rewritability were investigated. In the first case, amorphous marks were written into a crystalline starting phase and subsequently erased by recrystallization, as in other already established phase-change memory technologies. Results imply that this approach is also appropriate for probe-based memories. However, experimentally, the successful writing of amorphous bits using scanning electrical probes has not been widely reported. In light of this, a second approach has been studied, that of writing crystalline bits in an amorphous starting matrix, with subsequent erasure by reamorphization. With conventional phase-change materials, such as continuous films of GST, this approach invariably leads to the formation of a crystalline “halo” surrounding the erased (reamorphized) region, with severe adverse consequences on the achievable density. Suppression of the “halo” was achieved using patterned media or slow-growth phase-change media, with the latter seemingly more viable. |
Keywords | GeSbTe; phase-change materials; phase-change RAM; phase-change memories; scanning-probe memories |
Research Group | SensoLab group |
Publisher | IEEE |
Journal | IEEE Transactions on Nanotechnology |
ISSN | 1536-125X |
Electronic | 1941-0085 |
Publication dates | |
Online | 25 Oct 2010 |
Jul 2011 | |
Publication process dates | |
Deposited | 05 Jul 2013 |
Output status | Published |
Digital Object Identifier (DOI) | https://doi.org/10.1109/TNANO.2010.2089638 |
Scopus EID | 2-s2.0-79960280708 |
Web of Science identifier | WOS:000292966400037 |
Related Output | |
Has metadata | http://www.scopus.com/inward/record.url?eid=2-s2.0-79960280708&partnerID=MN8TOARS |
Language | English |
https://repository.mdx.ac.uk/item/842w5
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