Ultra high density scanning electrical probe phase-change memory for archival storage
Article
Wang, L., Wright, C., Shah, P., Aziz, M., Sebastian, A., Pozidis, H. and Pauza, A. 2011. Ultra high density scanning electrical probe phase-change memory for archival storage. Japanese Journal of Applied Physics. 50 (9S1), pp. 1-2. https://doi.org/10.1143/JJAP.50.09MD04
Type | Article |
---|---|
Title | Ultra high density scanning electrical probe phase-change memory for archival storage |
Authors | Wang, L., Wright, C., Shah, P., Aziz, M., Sebastian, A., Pozidis, H. and Pauza, A. |
Abstract | The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.² is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally. |
Research Group | SensoLab group |
Publisher | IOP Publishing |
Journal | Japanese Journal of Applied Physics |
ISSN | 0021-4922 |
Electronic | 1347-4065 |
Publication dates | |
20 Sep 2011 | |
Publication process dates | |
Deposited | 22 Sep 2011 |
Output status | Published |
Publisher's version | |
Digital Object Identifier (DOI) | https://doi.org/10.1143/JJAP.50.09MD04 |
Scopus EID | 2-s2.0-80053017634 |
Web of Science identifier | WOS:000295031100023 |
Related Output | |
Has metadata | http://www.scopus.com/inward/record.url?eid=2-s2.0-80053017634&partnerID=MN8TOARS |
Language | English |
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